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IXTP2N100P, IXTA2N100P Datasheet - IXYS

IXTP2N100P - Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N100P IXTA2N100P IXTP2N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 2 5 2 150 10 86 -55 +150 150 -55 +150 A A A mJ V/ns W C C 

IXTP2N100P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplies

IXTA2N100P-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXTP2N100P, IXTA2N100P. Please refer to the document for exact specifications by model.
IXTP2N100P Datasheet Preview Page 2 IXTP2N100P Datasheet Preview Page 3

Datasheet Details

Part number:

IXTP2N100P, IXTA2N100P

Manufacturer:

IXYS

File Size:

259.82 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTP2N100P, IXTA2N100P.
Please refer to the document for exact specifications by model.

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IXTA2N100P Power MOSFET IXYS