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IXTV02N250S, IXTA02N250 High Voltage Power MOSFETs

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Description

High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-247 .

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This datasheet PDF includes multiple part numbers: IXTV02N250S, IXTA02N250. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IXTV02N250S, IXTA02N250
Manufacturer
IXYS
File Size
195.82 KB
Datasheet
IXTA02N250-IXYS.pdf
Description
High Voltage Power MOSFETs
Note
This datasheet PDF includes multiple part numbers: IXTV02N250S, IXTA02N250.
Please refer to the document for exact specifications by model.

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2013 IXYS CORPORATION, All Rights Reserved DS100187E(04/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(o

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