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IXTV102N20T, IXTH102N20T Power MOSFET

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Description

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.

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This datasheet PDF includes multiple part numbers: IXTV102N20T, IXTH102N20T. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IXTV102N20T, IXTH102N20T
Manufacturer
IXYS
File Size
172.64 KB
Datasheet
IXTH102N20T-IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTV102N20T, IXTH102N20T.
Please refer to the document for exact specifications by model.

Features

* z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density © 2007 IXYS CORPORATION, All rights reserved DS99821 (04/07) IXTH102N20T IXTQ102N20T IXTV102N20T Symb

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