IXTV03N400S
IXYS
181.16kb
High voltage power mosfets.
TAGS
📁 Related Datasheet
IXTV02N250S - High Voltage Power MOSFETs
(IXYS)
High Voltage Power MOSFETs
IXTH02N250 IXTV02N250S
N-Channel Enhancement Mode Fast Intrinsic Diode
VDSS = ID25 = ≤RDS(on)
2500V 200mA 450Ω
TO-247 .
IXTV102N20T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH102N20T IXTQ102N20T IXTV102N20T
VDSS = ID2.
IXTV18N60P - Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 18N60P IXTV 18N60P IXTV 18N60PS
V = 600 V DSS
ID25 = 18 A ≤ RDS(on) 420 mΩ
S.
IXTV18N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 420mΩ(Max) ·Fast Sw.
IXTV18N60PS - Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 18N60P IXTV 18N60P IXTV 18N60PS
V = 600 V DSS
ID25 = 18 A ≤ RDS(on) 420 mΩ
S.
IXTV200N10T - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTV200N10T IXTV200N10TS
VDSS ID25
RDS(on)
= 100V = 200A ≤ 5.5mΩ
PLUS220 (IXFV.
IXTV200N10TS - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTV200N10T IXTV200N10TS
VDSS ID25
RDS(on)
= 100V = 200A ≤ 5.5mΩ
PLUS220 (IXFV.
IXTV22N50P - Power MOSFET
(IXYS)
PolarTM
Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
PLUS220 (IXTV)
IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P
PLU.
IXTV22N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTV22N50P
·FEATURES ·With TO-220F packaging ·With low gate drive requirements ·Easy to drive.
IXTV22N50PS - Power MOSFET
(IXYS)
PolarTM
Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
PLUS220 (IXTV)
IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P
PLU.