* z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Capability z Short Circuit Capability z High Voltage Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μ
IXXA30N65C3HV Datasheet (205.33 KB)
IXXA30N65C3HV
IXYS
205.33 KB
650v igbts.
Preliminary Technical Information
XPTTM 650V IGBT GenX3TM
IXXA30N65C3HV
Extreme Light Punch Through IGBT for 20-60 kHz Switching
VCES = IC110 = V .
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