IXXA30N65C3HV Datasheet - IXYS

IXXA30N65C3HV 650V IGBTs

Preliminary Technical Information XPTTM 650V IGBT GenX3TM IXXA30N65C3HV Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 650V 30A 2.2V 32ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load VGE =.

IXXA30N65C3HV Features

* z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Capability z Short Circuit Capability z High Voltage Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μ

IXXA30N65C3HV-IXYS.pdf