IXXH75N60C3 Datasheet - IXYS

IXXH75N60C3 600V IGBT

Preliminary Technical Information XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH75N60C3 VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 75A 2.3V 75ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped In.

IXXH75N60C3 Features

* z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Capability z Short Circuit Capability z International Standard Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES

IXXH75N60C3-IXYS.pdf