IXXH75N60C3D1 Datasheet - IXYS

IXXH75N60C3D1 600V IGBT

XPTTM 600V IGBT GenX3TM w/ Diode IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC= 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repeti.

IXXH75N60C3D1 Features

* z Optimized for 20-60kHz Switching z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Capability z Short Circuit Capability z International Standard Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement Applications z Power Inverters z UPS z M

IXXH75N60C3D1-IXYS.pdf