IXXK200N60B3 Datasheet - IXYS

IXXK200N60B3 600V IGBT

Preliminary Technical Information XPTTM 600V IGBTs GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXXK200N60B3 IXXX200N60B3 VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 200A 1.7V 110ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient Maximum Ratings 600 V 600 V ±20 V ±30 V TC = 25°C (Chip Capability.

IXXK200N60B3 Features

* z International Standard Packages z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z

IXXK200N60B3-IXYS.pdf