IXXK100N60C3H1 Datasheet - IXYS

IXXK100N60C3H1 600V IGBT

XPTTM 600V IGBTs GenX3TM w/ Diode IXXK100N60C3H1 IXXX100N60C3H1 Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 600 V 600 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 90°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V,.

IXXK100N60C3H1 Features

* z International Standard Packages z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z M

IXXK100N60C3H1-IXYS.pdf