IXXK110N65B4H1 - Extreme Light Punch Through IGBT
XPTTM 650V GenX4TM IXXK110N65B4H1 w/ Sonic Diode IXXX110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 110A V CE(sat) 2.10V tfi(typ) = 43ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Cur
IXXK110N65B4H1 Features
* Optimized for 10-30kHz Switching
* Square RBSOA
* Short Circuit Capability
* Anti-Parallel Sonic Diode
* High Current Handling Capability
* International Standard Packages Advantages
* High Power Density
* Low Gate Drive Requirement Applications
* Power Inverter
