MIO1200-33E10 IGBT Module

IXYS

Description

MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ.= 3.1 V CC C C' .

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Datasheet Specifications

Part number: MIO1200-33E10
Manufacturer: IXYS
File Size: 197.97 KB
Datasheet: MIO1200-33E10-IXYS.pdf
Description: IGBT Module

Features

* NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC

Applications

* AC power converters for - industrial drives - windmills - traction
* LASER pulse generator 20110119a 1-6 phase-out Diode Symbol IF80 IFSM Conditions Maximum Ratings TC = 80°C VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave 1200 11000 A A Symbol Conditions VF IF = 1200

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MIO1200-33E10 IGBT Module IXYS

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