MIO1200-33E10 Datasheet - IXYS

MIO1200-33E10 IGBT Module

MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ. = 3.1 V CC C C' G E' EE E phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 1.

MIO1200-33E10 Features

* NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC

* Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications

* AC power converters for - industrial drives -

MIO1200-33E10 Datasheet (197.97 KB)