MIO1500-25E10 Datasheet (IXYS)

MIO1500-25E10, IGBT Module

Advanced Technical Information MIO 1500-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1500 A VCES = 2500 V VCE(sat) typ.

= 2.7 V CC C C' G E' EE E IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 1700 V; VCEM CHIP = < 2500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 2500 V ± 20 V 1500 A 3000 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.

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MIO1500-25E10 Features

* NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC

* Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications

* AC power converters for - industrial drives -