MIO1800-17E10 Datasheet (IXYS)

MIO1800-17E10, IGBT Module

Advanced Technical Information MIO 1800-17E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1800 A VCES = 1700 V VCE(sat) typ.

= 2.3 V CC C C' G E' EE E IGBT Symbol VCES VGES IC80 ICM t SC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C V CC = 1000 V; VCEM CHIP = <1700 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 1700 V ± 20 V 1800 A 3600 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) mi

MIO1800-17E10 Features

* NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC

* Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications

* AC power converters for - industrial drives -