Datasheet Details
Part number:
MIO1200-33E11
Manufacturer:
IXYS
File Size:
131.70 KB
Description:
Igbt module.
Datasheet Details
Part number:
MIO1200-33E11
Manufacturer:
IXYS
File Size:
131.70 KB
Description:
Igbt module.
MIO1200-33E11, IGBT Module
Advanced Technical Information MIO 1200-33E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ.
= 3.1 V CC C C' 5 7 9 3 G 2 E' 1 EE E 46 8 phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless other
MIO1200-33E11 Features
* NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC
* Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications
* AC power converters for - industrial drives -
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