MIO600-65E11 Datasheet - IXYS

MIO600-65E11 IGBT Module

MIO 600-65E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 600 A VCES = 6500 V VCE(sat) typ = 4.2 V CC C C' 5 7 9 3 G 2 E' 1 EE E 46 8 phase-out IGBT Symbol VCES VGES IC85 ICM t SC Conditions VGE = 0 V TC = 85°C tp = 1 ms; TC = 85°C V= CC 4400 V; VCEM CHIP = < 6500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE.

MIO600-65E11 Features

* NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC

* Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications

* AC power converters for - industrial drives -

MIO600-65E11 Datasheet (177.03 KB)