GWM160-0055P3 - Three phase full bridge

IXYS Corporation

Datasheet Details

MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 86 18 25 25 50 70 40 0.9 100 1.7 1.4 2.3 3.8 2.9 m Ω m.

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