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18N60 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 18N60 *.

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Datasheet Specifications

Part number
18N60
Manufacturer
Inchange Semiconductor
File Size
207.85 KB
Datasheet
18N60-InchangeSemiconductor.pdf
Description
N-Channel MOSFET

Features

* With TO-247 packaging
* High speed switching
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 48 PD Total Dissipation 360 Tj Operating Junction

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