18N65 Datasheet, Mosfet, UNISONIC TECHNOLOGIES

18N65 Features

• Mosfet
• RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9.0A
• Fast Switching Capability
• Avalanche Energy Specified
• Improved dv/dt Capability, High Ruggedness
• SYMBO

PDF File Details

Part number:

18N65

Manufacturer:

UNISONIC TECHNOLOGIES

File Size:

403.61kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and opera

18N65 Application

• Applications
• FEATURES
• RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9.0A
• Fast Switching Capability
• Avalanche Energy Specifie

TAGS

18N65

UNISONIC TECHNOLOGIES

📁 Related Datasheet

18N60 - N-Channel MOSFET (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 18N60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy.

18N60 - N-Channel Power MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, plan.

18N60-ML - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 18N60-ML 18A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N60-ML is a high voltage power MOSFET bines advanc.

18N60M2 - N-Channel Power MOSFET (STMicroelectronics)
STFU18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ult.

18N65M5 - N-Channel Power MOSFET (STMicroelectronics)
STL18N65M5 Datasheet N-channel 650 V, 215 mΩ typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 5x6 HV package 1 2 3 4 PowerFLAT 5x6 HV D(5, 6, 7, 8) .

18N10 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-.

18N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate.

18N120BN - HGTG18N120BN (Fairchild Semiconductor)
HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new .

18N20 - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 18N20 Preliminary 18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET fiel.

18N20 - N-Channel Mosfet Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·1.