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2N3240 - Silicon NPN Power Transistor

2N3240 Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. Low Collector-Emitter Saturation Voltage. 100% avalanche tested. Minimum Lot-to-Lot variations for rob.

2N3240 Applications

* Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A

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Datasheet Details

Part number
2N3240
Manufacturer
Inchange Semiconductor
File Size
171.20 KB
Datasheet
2N3240-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
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