2SA1060 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1060 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High Power Dissipation. Complement to Type 2SC2484. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SA1060
Manufacturer: Inchange Semiconductor
File Size: 208.70 KB
Datasheet: 2SA1060_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Colle

2SA1060 Distributors

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2SA1060 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1060-like datasheet