2SA1062 Datasheet - Inchange Semiconductor

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2SA1062 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1062 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Power Dissipation. Complement to Type 2SC2486. Minimum Lot-to-Lot v.

2SA1062_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1062

Manufacturer:

Inchange Semiconductor

File Size:

208.88 KB

Description:

POWER TRANSISTOR

Applications

* Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Col

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2SA1062 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1062-like datasheet