Datasheet4U Logo Datasheet4U.com

2SA1063 POWER TRANSISTOR

2SA1063 Description

isc Silicon PNP Power Transistor 2SA1063 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type.

2SA1063 Applications

* Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Pow

📥 Download Datasheet

Preview of 2SA1063 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA1060 - Transistor (Panasonic Semiconductor)
  • 2SA1061 - TRANSISTOR (Panasonic Semiconductor)
  • 2SA1062 - TRANSISTOR (Panasonic Semiconductor)
  • 2SA1064 - Silicon POwer Transistors (SavantIC)
  • 2SA1065 - Silicon POwer Transistors (SavantIC)
  • 2SA1067 - Silicon POwer Transistors (SavantIC)
  • 2SA1068 - Silicon POwer Transistors (SavantIC)
  • 2SA1069 - Silicon POwer Transistors (SavantIC)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1063-like datasheet