2SA1065 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1065 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type.

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Datasheet Specifications

Part number: 2SA1065
Manufacturer: Inchange Semiconductor
File Size: 213.22 KB
Datasheet: 2SA1065_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Coll

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2SA1065 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1065-like datasheet