2SA1067 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1067 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SA1067
Manufacturer: Inchange Semiconductor
File Size: 207.59 KB
Datasheet: 2SA1067_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Coll

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2SA1067 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1067-like datasheet