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2SA1067 Datasheet - Inchange Semiconductor

2SA1067 - POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) *Good Linearity of hFE *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for AF amplifier, high power amplifier applications.

ABSOL

2SA1067_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1067

Manufacturer:

Inchange Semiconductor

File Size:

207.59 KB

Description:

Power transistor.

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