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2SA1280 Datasheet - Inchange Semiconductor

2SA1280 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

2SA1280_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1280

Manufacturer:

Inchange Semiconductor

File Size:

174.39 KB

Description:

Power transistor.

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2SA1280 2SA1280 POWER TRANSISTOR Inchange Semiconductor

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