Datasheet4U Logo Datasheet4U.com

2SA1280 - POWER TRANSISTOR

Product Overview

📥 Download Datasheet

Datasheet preview – 2SA1280

Datasheet Details

Part number 2SA1280
Manufacturer Inchange Semiconductor
File Size 174.39 KB
Description POWER TRANSISTOR
Datasheet download datasheet 2SA1280 Datasheet
Additional preview pages of the 2SA1280 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃

📁 Similar Datasheet

  • 2SA1282 - Silicon PNP Transistor (Isahaya Electronics Corporation)
  • 2SA1282A - Silicon PNP Transistor (Isahaya Electronics Corporation)
  • 2SA1283 - PNP Transistor (INCHANGE)
  • 2SA1284 - Silicon PNP Epitaxial Type Transistor (Isahaya Electronics)
  • 2SA1285 - Silicon PNP Transistor (Isahaya Electronics Corporation)
  • 2SA1285A - Silicon PNP Transistor (Isahaya Electronics Corporation)
  • 2SA1286 - Silicon PNP Epitaxial Type Transistor (ETC)
  • 2SA1287 - Silicon PNP Epitaxial Type Transistor (ETC)
Other Datasheets by Inchange Semiconductor
Published: |