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2SA1280 POWER TRANSISTOR

2SA1280 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfor.

2SA1280 Applications

* Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ T

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