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2SA1283 - PNP Transistor

Datasheet Summary

Description

High Voltage and High Current Vceo=-60V(Min.） Excellent hFE Linearity Low Noise Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications

Driver stage amplifier applications.

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Datasheet Details

Part number 2SA1283
Manufacturer INCHANGE
File Size 162.61 KB
Description PNP Transistor
Datasheet download datasheet 2SA1283 Datasheet
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isc Silicon PNP Transistor DESCRIPTION ·High Voltage and High Current Vceo=-60V(Min.） ·Excellent hFE Linearity ·Low Noise ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SA1283 VALUE UNIT -60 V -60 V -6 V -1 A 900 mW 150 ℃ -55~150 ℃ isc website： www.iscsemi.
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