2SA1667 Datasheet - Inchange Semiconductor

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2SA1667 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1667 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). DC Current Gain- : hFE= 60(Min)@ (VCE= -10V, IC= -0. Complement to Type.

2SA1667_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1667

Manufacturer:

Inchange Semiconductor

File Size:

208.85 KB

Description:

POWER TRANSISTOR

Applications

* Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Con

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2SA1667 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1667-like datasheet