2SA1670 Datasheet - Inchange Semiconductor

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2SA1670 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1670 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min). Good Linearity of hFE. Complement to Type 2SC4385. Minimum Lot-to-Lot varia.

2SA1670_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1670

Manufacturer:

Inchange Semiconductor

File Size:

217.45 KB

Description:

POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Cont

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2SA1670 POWER TRANSISTOR Inchange Semiconductor

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