Datasheet4U Logo Datasheet4U.com

2SA1757 - POWER TRANSISTOR

2SA1757 Description

isc Silicon PNP Power Transistor 2SA1757 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). High Switching Speed. Low Saturation Voltage- : VCE(sat)= -0.

2SA1757 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak

📥 Download Datasheet

Preview of 2SA1757 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA1753 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA1758 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1759 - High-voltage Switching Transistor (Rohm)
  • 2SA1700 - PNP Transistor (INCHANGE)
  • 2SA1701 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA1702 - PNP Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA1703 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SA1704 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1757-like datasheet