2SA1718
Inchange Semiconductor
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Power transistor.
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2SA1710 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN3097
Features
· High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process.
PNP/NPN .
2SA1714 - PNP SILICON EPITAXIAL POWER TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
The 2SA1714 is a high.
2SA1715 - (2SAxxxx) TRANSISTOR
(Micro Electronics)
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. .. 4U.
DataSheet 4 U .
.DataSHeet4U.
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2SA1718 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1718
DESCRIPTION ·With TO-220F package ·High DC .
2SA1700 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation-
: PC= 10W@TC=.
2SA1700 - PNP Epitaxial Silicon Transistor
(Sanyo Semicon Device)
.
2SA1700 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1700
Rev.E May.-2016
DATA SHEET
/ Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.
/ Features ,, MBIT 。 High br.
2SA1700 - PNP Transistor
(LGE)
1.BASE 2.COLLECTOR 3.EMITTER
2SA1700(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
High breakdown voltage Adoption of MBIT process Excellen.
2SA1700 - PNP Epitaxial Planar Silicon Transistor
(GME)
PNP Epitaxial Planar Silicon Transistor
FEATURES
z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity.
Pb
Lead-free
Prod.
2SA1700 - PNP EPITAXIAL SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE DRIVER APPLICATION
FEATURES
* High breakdown voltage. * Exc.