2SA1741 Datasheet - Inchange Semiconductor

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2SA1741 POWER TRANSISTOR

isc Silicon PNP Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min). High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A). Low Saturation.

2SA1741_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1741

Manufacturer:

Inchange Semiconductor

File Size:

214.25 KB

Description:

POWER TRANSISTOR

Features

* a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Curre

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2SA1741 POWER TRANSISTOR Inchange Semiconductor

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