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2SA1758 - POWER TRANSISTOR

2SA1758 Description

isc Silicon PNP Power Transistor 2SA1758 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). DC Current Gain- : hFE= 60(Min)@ (VCE= -2V, IC= -2A). Low Saturation Voltage-.

2SA1758 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=

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POWER TRANSISTOR Inchange Semiconductor
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