2SA1942 Datasheet - Inchange Semiconductor

2SA1942, Power Transistor

isc Silicon PNP Power Transistor 2SA1942 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Complement to Type 2SC5199. Minimum Lot-to-Lot variations for robust de.

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2SA1942_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1942

Manufacturer:

Inchange Semiconductor

File Size:

219.53 KB

Description:

Power Transistor

Applications

* Power amplifier applications
* Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5

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2SA1942 Power Transistor Inchange Semiconductor

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