2SA1941 Datasheet - Toshiba Semiconductor

2SA1941, Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm * High breakdown voltage: VCEO = <.

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2SA1941_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1941

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

152.04 KB

Description:

Silicon PNP Transistor

Features

* es, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 4 2013-11-01

Applications

* 2SA1941 Unit: mm
* High breakdown voltage: VCEO =
* 140 V (min)
* Complementary to 2SC5198
* Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltag

2SA1941 Distributors

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