* es, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 4 2013-11-01
2SA1941
Toshiba ↗ Semiconductor
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Silicon pnp transistor.
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
* High breakdown voltage: VCEO = <.
📁 Related Datasheet
2SA1940 - Silicon PNP Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1940
Power Amplifier Applications
2SA1940
Unit: mm
• Complementary to 2SC5197
• Remended f.
2SA1940 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1940
DESCRIPTION ·With TO-3P(I) package ·Complem.
2SA1940 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to.
2SA1941 - PNP Epitaxial Silicon Transistor
(JILIN SINO)
PNP Silicon PNP Epitaxial Transistor
R
2SA1941
VCEO=-140V (min) 2SC5198
70W
RoHS
APPLICATIONS
Power Amplifier Applications
FEATURES
High collector v.
2SA1941 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1941
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-3P PNP 。Silicon PNP transistor in a TO-3P Plastic Package.
/ Features 70W ， 2SC5198 。 Rec.
2SA1941 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1941
DESCRIPTION ·With TO-3P(I) package ·Complem.
2SA1941 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to.
2SA1941B - Silicon PNP Transistor
(NELL SEMICONDUCTOR)
SEMICONDUCTOR
2SA1941B Series
Silicon PNP triple diffusion planar transistor -10A/-140V/100W
RoHS RoHS
Nell High Power Products
2.0
19.9±0.3
4.0.
