2SA1942 Datasheet - Toshiba Semiconductor

2SA1942 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications 2SA1942 Unit: mm High breakdown voltage: VCEO = 160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 160 V Collector-emitter voltage V CEO 160 V Emitter-base voltage VEBO

2SA1942 Features

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2SA1942_ToshibaSemiconductor.pdf