2SA959 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min. High Power Dissipation. Minimum Lot-to-Lot variations for robust device per.

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Datasheet Specifications

Part number: 2SA959
Manufacturer: Inchange Semiconductor
File Size: 193.09 KB
Datasheet: 2SA959_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=2

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