2SC1827 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min. Complement to Type 2SA769. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 2SC1827
Manufacturer: Inchange Semiconductor
File Size: 192.71 KB
Datasheet: 2SC1827_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Collector Current-

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2SC1827 Silicon NPN Power Transistors Inchange Semiconductor

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