2SC1881K Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= 1. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min). Low Collector-Emitter Sa.

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Datasheet Specifications

Part number: 2SC1881K
Manufacturer: Inchange Semiconductor
File Size: 215.07 KB
Datasheet: 2SC1881K-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for High gain amplifier power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collecto

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2SC1881K Silicon NPN Power Transistor Inchange Semiconductor

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