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2SC3122 Datasheet - Inchange Semiconductor

2SC3122 Silicon NPN RF Transistor

*High Gain: Gpe= 24dB TYP. @ f= 200MHz *Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS *Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Em.

2SC3122_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SC3122

Manufacturer:

Inchange Semiconductor

File Size:

188.52 KB

Description:

Silicon npn rf transistor.

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2SC3122 2SC3122 Silicon NPN Transistor Inchange Semiconductor

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