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2SC3122 - Silicon NPN RF Transistor

2SC3122 Description

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 .
High Gain: Gpe= 24dB TYP. Low Noise: NF= 2. Designed for TV VHF RF amplifier applications.

2SC3122 Applications

* Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 20 mA IB B Base Current-Continuous 1

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Datasheet Details

Part number
2SC3122
Manufacturer
Inchange Semiconductor
File Size
188.52 KB
Datasheet
2SC3122_InchangeSemiconductor.pdf
Description
Silicon NPN RF Transistor

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Silicon NPN Transistor Inchange Semiconductor
Inchange Semiconductor 2SC3122-like datasheet