2SC3230 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min). Good Linearity of hFE. Complement to Type 2SA1276. Minimum Lot-to-Lot varia.

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Datasheet Specifications

Part number: 2SC3230
Manufacturer: Inchange Semiconductor
File Size: 198.58 KB
Datasheet: 2SC3230_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous PC T

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2SC3230 Silicon NPN Power Transistors Inchange Semiconductor

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