2SC3356

Silicon NPN Transistor

Inchange Semiconductor

2SC3356 General Description

*Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
*High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for low no.

2SC3356 Datasheet (399.63 KB)

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2SC3356

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Inchange Semiconductor

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Silicon npn transistor.

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2SC3356 Silicon NPN Transistor Inchange Semiconductor

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