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2SC3583 Datasheet - Inchange Semiconductor

Silicon NPN RF Transistor

2SC3583 General Description

*Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz *High Power Gain MAG = 15dB TYP. @VCE = 8V, IC = 20 mA, f = 1.0 GHz *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low noise .

2SC3583 Datasheet (406.82 KB)

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Datasheet Details

Part number:

2SC3583

Manufacturer:

Inchange Semiconductor

File Size:

406.82 KB

Description:

Silicon npn rf transistor.

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2SC3583 Silicon NPN Transistor Inchange Semiconductor

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