Datasheet Details
| Part number | 2SC3583 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 406.82 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet |
 2SC3583-InchangeSemiconductor.pdf
|
| Part number | 2SC3583 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 406.82 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet |
2SC3583-InchangeSemiconductor.pdf
|
Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP.@VCE = 8 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 15dB TYP. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UHF and CATV band.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Vol
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