2SC4368 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4368 .
Collector-Emitter Breakdown Voltage : VCEO= 150V(Min). Complement to Type 2SA1657. Good Linearity of hFE. Minimum Lot-to-Lot variatio.

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Datasheet Specifications

Part number: 2SC4368
Manufacturer: Inchange Semiconductor
File Size: 183.03 KB
Datasheet: 2SC4368_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A IB Base Current-C

2SC4368 Distributors

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2SC4368 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC4368-like datasheet