Part number: 2SC4361
Manufacturer: Sanyo Semiconductor
File Size: 140.27KB
Download: 馃搫 Datasheet
Description: PNP/NPN Epitaxial Planar Silicon Transistors
Image gallery
TAGS
馃搧 Related Datasheet
2SC4363 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
.
2SC4364 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN3008
NPN Epitaxial Planar Silicon Transistor
2SC4364
VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications
Features.
2SC4365 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN3007
NPN Epitaxial Planar Silicon Transistor
2SC4365
VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications
Features.
2SC4366 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC4366
Silicon NPN Epitaxial
Application
Low Frequency amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC4366
Absolute Maximum Rat.
2SC4367 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC4367
Silicon NPN Epitaxial
Application
High Frequency amplifier
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SC4367
Absolute Maximum.
2SC4368 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4368
DESCRIPTION 路Collector-Emitter Breakdown Voltage
: VCEO= 150V(Min) 路Complement to Ty.
2SC4369 - SILICON POWER TRANSISTOR
(SavantIC)
www.datasheet4u.com
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4369
DESCRIPTION 路With TO-220F package 路Complem.
2SC4369 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4369
DESCRIPTION 路Collector-Emitter Breakdown Voltage
: VCEO= 30V(Min) 路Good Linearity of.
2SC4300 - Silicon NPN Transistor
(Sanken electric)
2SC4300
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25掳C)
Symbol VCBO VCEO VEBO IC.
2SC4300 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4300
DESCRIPTION 路Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) 路High Switch.