2SC643 - Silicon NPN Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2SC643
Manufacturer	Inchange Semiconductor
File Size	177.28 KB
Description	Silicon NPN Power Transistors
Datasheet	2SC643 Datasheet
Additional preview pages of the 2SC643 datasheet.

Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC C

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Published: Oct 15, 2013 |