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2SC643 Silicon NPN Power Transistors

2SC643 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC643 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-L.

2SC643 Applications

* Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2

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Datasheet Details

Part number
2SC643
Manufacturer
Inchange Semiconductor
File Size
177.28 KB
Datasheet
2SC643_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SC643-like datasheet