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2SD1476 - Power Transistor

2SD1476 Description

isc Silicon NPN Power Transistor 2SD1476 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Good Linearit.

2SD1476 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak Collector P

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Power Transistor Inchange Semiconductor
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