2SD1476 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1476 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Good Linearit.

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Datasheet Specifications

Part number: 2SD1476
Manufacturer: Inchange Semiconductor
File Size: 209.60 KB
Datasheet: 2SD1476_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak Collector P

2SD1476 Distributors

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2SD1476 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1476-like datasheet