2SK1082 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SK1082

Manufacturer:

Inchange Semiconductor

File Size:

203.81kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

2SK1082 Application

• Applications
• Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Dra

TAGS

📁 Related Datasheet

2SK108 - Silicon P-Channel FET (Toshiba)
.

2SK1081 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK1081 DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variat.

2SK1081-01 - N-Channel Silicon Power MOSFET (Fuji)
Free Datasheet http://.. Free Datasheet http://.. Free Datasheet http://.. Free Datasheet http:/.

2SK1082 - N-Channel Silicon Power MOS-FET (Fuji Electric)
w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

2SK1082-01 - N-Channel Silicon Power MOS-FET (Fuji Electric)
w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

2SK1083 - N-channel MOS-FET (Fuji Electric)
2SK1083-MR F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MO.

2SK1083-MR - N-channel MOS-FET (Fuji Electric)
2SK1083-MR F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MO.

2SK1084 - N-Channel MOSFET (Fuji Semiconductors)
.

2SK1085-M - N-Channel MOSFET (Fuji Electric)
2SK1085-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS.

2SK1085-M - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variat.