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BUR52 - Silicon NPN Power Transistor

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Part number BUR52
Manufacturer Inchange Semiconductor
File Size 150.19 KB
Description Silicon NPN Power Transistor
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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) High Current Capability Low Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 25A APPLICATIONS Designed for switching and linear applications in military and industrial equipment.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO(SUS) Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous ICM Collector Current-Peak

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