BUR52 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR52 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min). High Current Capability. Low Saturation Voltage : VCE(sat)= 1.

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Datasheet Specifications

Part number: BUR52
Manufacturer: Inchange Semiconductor
File Size: 150.19 KB
Datasheet: BUR52-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO(SUS) Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuou

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BUR52 Silicon NPN Power Transistor Inchange Semiconductor

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