Datasheet4U Logo Datasheet4U.com

BUR51 NPN Transistor

BUR51 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min). High Current Capability. High Switching Speed. Minimum Lot-to-Lot vari.

BUR51 Applications

* Designed for low voltage ,high speed,power switching and linear in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Co

📥 Download Datasheet

Preview of BUR51 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
BUR51
Manufacturer
INCHANGE
File Size
208.21 KB
Datasheet
BUR51-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BUR52 - HIGH CURRENT NPN SILICON TRANSISTOR (STMicroelectronics)
  • BUR54 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUR24 - Bipolar NPN Device (Seme LAB)

📌 All Tags

INCHANGE BUR51-like datasheet