BUR50 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min). High Current Capability. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: BUR50
Manufacturer: INCHANGE
File Size: 200.66 KB
Datasheet: BUR50-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical. It is particularly suited for battery switch mode application such as switching regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200

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