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BUR50 NPN Transistor

BUR50 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min). High Current Capability. Minimum Lot-to-Lot variations for robust device p.

BUR50 Applications

* Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical. It is particularly suited for battery switch mode application such as switching regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200

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Datasheet Details

Part number
BUR50
Manufacturer
INCHANGE
File Size
200.66 KB
Datasheet
BUR50-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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